RLDRAM内存
RLDRAM内存特点：
高性能
超低的总线周转时间支持更高的可持续带宽
数据包缓冲和检查的理想选择
扩展的运行温度范围
DRAM概述：
使用我们高品质的DRAM来加快您的产品投向市场的步伐－我们的DRAM针对各种应用均经过最严格的高可靠性测试－从工业以及汽车应用所需的极端温度和性能测试到企业系统的严格规范，我们有满足您设计需要的合适解决方案。
Micron RLDRAM内存英文概述：
Available in three densities, providing flexibility for many designs
Available in wide bus widths with minimal part counts in wide-bus configured systems; common or separate I/O
HSTL and SSTL I/O compatibility
Increased operating range for optimum functionality in extreme environments
Fast random access
High sustainable performance
Enables clean, high-frequency operation
Adds flexibility to board design
Essential for testing boards with a high number of components