移动LPDRAM
移动LPDRAM特点：
低待机电流和低自刷新可以延长电池使用时间
温度补偿自刷新（TCSR）和部分阵列自刷新（PASR）模式
DRAM概述：
使用我们高品质的DRAM来加快您的产品投向市场的步伐－我们的DRAM针对各种应用均经过最严格的高可靠性测试－从工业以及汽车应用所需的极端温度和性能测试到企业系统的严格规范，我们有满足您设计需要的合适解决方案。
Micron RLDRAM内存英文概述：
Available in multiple densities, providing flexibility for many designs
Enables the use of fewer components to support wide-bus architectures
Low voltage helps reduce power consumption—a key advantage over standard DRAM
Provides performance comparable to SDR and DDR SDRAM, with the added advantage of power savings
Delivers low power dissipation in standby and active modes, plus special mobile features to reduce power consumption for a more efficient design
TCSR: Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
Increased operating range for optimum functionality in extreme environments